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| PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ZTX752 ZTX753 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C derate above 25C SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX752 -100 -80 -5 -6 -2 1 5.7 E-Line TO92 Compatible ZTX753 -120 -100 UNIT V V V A A W mW/C C Operating and Storage Temperature Range -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current ZTX752 ZTX753 SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS. V(BR)CBO V(BR)CEO V(BR)EBO ICBO -100 -80 -5 -0.1 -10 IEBO -0.1 -0.17 -0.3 -0.30 -0.5 -0.9 -0.8 -1.25 -1 -120 -100 -5 V V V A A A A A IC=-100A IC=-10mA* IE=-100A VCB=-80V VCB=-100V VCB=-80V,Tamb=100C VCB=-100V,Tamb=100C VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* -0.1 -10 -0.1 -0.17 -0.3 -0.30 -0.5 -0.9 -0.8 Emitter Cut-Off Current Collector-Emitter VCE(sat) Saturation Voltage Base-Emitter VBE(sat) Saturation Voltage Base-Emitter Turn-On Voltage VBE(on) V V -1.25 V -1 V 3-260 ZTX752 ZTX753 ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER SYMBOL ZTX752 MIN. TYP. 100 140 40 600 30 ZTX753 MAX. MIN. TYP. 100 140 40 600 30 MAX. UNIT CONDITIONS. Transition Frequency Switching Times fT ton toff MHz ns ns pF IC=-100mA, VCE=-5V f=100MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA VCB=10V f=1MHz Output Capacitance Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) MAX. 175 116 70 UNIT C/W C/W C/W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.5 200 Max Power Dissi ation - (Watts) Thermal Resistance (C/W) D=1 (D.C.) 2.0 t1 D=t1/tP tP C 1.5 as e te m pe 1.0 Am ra 100 D=0.5 bie tu nt t re em 0.5 0 per at u re D=0.2 D=0.1 Single Pulse -40 -20 0 20 40 60 80 100 120 140 160 180 200 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-261 ZTX752 ZTX753 TYPICAL CHARACTERISTICS 0.6 0.5 td tr tf ns 140 120 100 80 60 40 20 IB1=IB2=IC/10 ts ns 1400 1200 1000 800 600 400 200 0 0.1 1 td ts tf tr VCE(sat) - (Volts) 0.4 0.3 0.2 0.1 0 IC/IB=10 Switching time 0.1 1 10 0.0001 0.001 0.01 0 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.4 225 VBE(sat) - (Volts) 1.2 hFE - Gain 175 VCE=2V 125 1.0 IC/IB=10 0.8 75 0.6 0 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 10 1.2 VBE(sat) v IC Single Pulse Test at Tamb=25C 1.0 IC - Collector Current (Amps) VBE - (Volts) 1 VCE=2V 0.8 0.6 0.1 D.C. 1s 100ms 10ms 1.0ms 100s 0.4 0.0001 0.001 0.01 0.1 1 10 ZTX752 ZTX753 0.01 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-262 |
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